Idatha yokuhlola ye-Cell Thermal Runaway kanyeUkuhlaziywa KwegesiUkukhiqiza,
Ukuhlaziywa Kwegesi,
Ukuze kuvikeleke umuntu nempahla, uhulumeni wase-Malaysia usungula uhlelo lokunikeza isitifiketi somkhiqizo futhi uqapha izinto zikagesi zikagesi, ulwazi & multimedia nezinto zokwakha. Imikhiqizo elawulwayo ingathunyelwa e-Malaysia kuphela ngemva kokuthola isitifiketi sokuqinisekiswa komkhiqizo nokulebula.
I-SIRIM QAS, inkampani ephethwe ngokugcwele ye-Malaysian Institute of Industry Standards, iyona kuphela iyunithi yesitifiketi eqokiwe yama-ejensi kazwelonke alawulayo e-Malaysian (KDPNHEP, SKMM, njll.).
Isitifiketi sebhethri sesibili sikhethwe i-KDPNHEP (uMnyango Wezohwebo Zasekhaya kanye Nezindaba Zabathengi) waseMalaysia njengowukuphela kwesiphathimandla sokunikeza izitifiketi. Okwamanje, abakhiqizi, abangenisi nabahwebi bangafaka isicelo sokuthola isitifiketi ku-SIRIM QAS futhi bafake isicelo sokuhlolwa nokuqinisekiswa kwamabhethri esibili ngaphansi kwemodi yesitifiketi enelayisensi.
Ibhethri lesibili okwamanje lingaphansi kwesitifiketi sokuzithandela kodwa lizoba kububanzi besitifiketi esiyisibopho maduze. Usuku oluqondile oluyisibopho lungaphansi kwesikhathi esisemthethweni sesimemezelo sase-Malaysian. I-SIRIM QAS isivele isiqalile ukwamukela izicelo zesitifiketi.
Izinga lesitifiketi sebhethri lesibili : MS IEC 62133:2017 noma IEC 62133:2012
● Isungule isiteshi esihle sokushintshisana sobuchwepheshe nolwazi lokushintshisana ne-SIRIM QAS eyabela uchwepheshe ukuthi aphathe amaphrojekthi we-MCM nemibuzo kuphela kanye nokwabelana ngolwazi lwakamuva olunembile lwale ndawo.
● I-SIRIM QAS ibona idatha yokuhlola ye-MCM ukuze amasampuli akwazi ukuhlolwa nge-MCM esikhundleni sokulethwa e-Malaysia.
● Ukuhlinzeka ngesevisi yokuma okukodwa kokugunyazwa kwe-Malaysian kwamabhethri, ama-adaptha namaselula.
I-T1 izinga lokushisa lokuqala lapho iseli lishisa khona futhi izinto zangaphakathi zibole. Inani layo libonisa ukuzinza okuphelele kokushisa kweseli. Amaseli anamanani aphezulu e-T1 azinzile emazingeni okushisa aphezulu. Ukwenyuka noma ukuncipha kwe-T1 kuzothonya ukushuba kwefilimu ye-SEI. Ukushisa okuphezulu nokuphansi kokuguga kweseli kuzokwehlisa inani le-T1 futhi kwenze ukuzinza okushisayo kweseli kube kubi kakhulu. Ukuguga okushisa okuphansi kuzodala ukukhula kwe-lithium dendrites, okuholela ekwehleni kwe-T1, futhi ukuguga okuphezulu kwezinga lokushisa kuzoholela ekuqhekekeni kwefilimu ye-SEI, futhi i-T1 nayo izokwehla.
I-T2 izinga lokushisa lokunciphisa ingcindezi. Ukukhululeka ngesikhathi kwegesi yangaphakathi kungaqeda ukushisa futhi kubambezele ukuthambekela kokuphuma kokushisa okushisayo.I-T3 iyisiqhumane sokushisa kwe-thermal runaway, nendawo yokuqala yokukhishwa kokushisa engqamuzaneni. Inobudlelwano obuqinile nokusebenza kwe-substrate ye-diaphragm. Inani le-T3 liphinde libonise ukumelana nokushisa kwento engaphakathi kweseli. Iseli eline-T3 ephezulu izovikeleka kakhudlwana ngaphansi kwezimo ezihlukahlukene zokuhlukumeza.
I-T4 izinga lokushisa eliphakeme kakhulu amaseli angafinyelela kulo ngesikhathi sokubaleka okushisayo. Ingozi yokusabalala kokushisa okushisayo kumojula noma kusistimu yebhethri ingabuyekezwa ngokuhlolwa kokukhiqizwa kokushisa okuphelele (ΔT=T4 -T3) phakathi nokubaleka okushisayo kweseli. Uma ukushisa kuphezulu kakhulu, kuzoholela ekubalekeni okushisayo kwamaseli azungezile, futhi ekugcineni asakazeke kuyo yonke imojuli.